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High-k gate stack engineering : Towards meeting low standby power and high performance targetsDE GENDT, S; BRUNCO, D; KAUSHIK, V et al.Proceedings - Electrochemical Society. 2005, pp 109-117, issn 0161-6374, isbn 1-56677-463-2, 9 p.Conference Paper

Electrical Properties of Low-V_T Metal-Gated n-MOSFETs Using La₂O₃/SiO_x as Interfacial Layer Between HfLaO High-κ Dielectrics and Si ChannelCHANG, S. Z; YU, H. Y; KEMER, C et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 430-433, issn 0741-3106, 4 p.Article

Potential remedies for the V_T/V_fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based surveyDEWEERD, W; KAUSHIK, V; DE GENDT, S et al.Microelectronics and reliability. 2005, Vol 45, Num 5-6, pp 786-789, issn 0026-2714, 4 p.Conference Paper

Reliability degradation of HfSiO gate dielectric layers : influence of nitridationVELLIANITIS, G; PETRY, J; HOOKER, J. C et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1972-1975, issn 0167-9317, 4 p.Conference Paper

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface qualityLEYS, F. E; BONZOM, R; DILLIWAY, G et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 679-684, issn 1369-8001, 6 p.Conference Paper

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative chargeAGOSTINELLI, G; DELABIE, A; VITANOV, P et al.Solar energy materials and solar cells. 2006, Vol 90, Num 18-19, pp 3438-3443, issn 0927-0248, 6 p.Conference Paper

Interface control of high-κ gate dielectrics on GeCAYMAX, M; HOUSSA, M; POURTOIS, G et al.Applied surface science. 2008, Vol 254, Num 19, pp 6094-6099, issn 0169-4332, 6 p.Conference Paper

High-κ dielectics integration prospectsKUBICEK, S; VAN ELSHOCHT, S; VELOSO, A et al.Proceedings - Electrochemical Society. 2005, pp 169-189, issn 0161-6374, isbn 1-56677-464-0, 21 p.Conference Paper

Effect of postdeposition anneal conditions on defect density of HfO₂ layers measured by wet etchingCLAES, M; DE GENDT, S; TSAI, W et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 11, pp F269-F275, issn 0013-4651Article

Si cap passivation for Ge nMOS applicationsSIONCKE, S; VANHERLE, W; DE GENDT, S et al.Microelectronic engineering. 2013, Vol 109, pp 46-49, issn 0167-9317, 4 p.Article

Challenges and opportunities in advanced Ge pMOSFETsSIMOEN, E; MITARD, J; CAYMAX, M et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 588-600, issn 1369-8001, 13 p.Article

Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devicesADELMANN, C; LIN, D; NYNS, L et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1098-1100, issn 0167-9317, 3 p.Conference Paper

High-k dielectrics for future generation memory devices (Invited Paper)KITTL, J. A; OPSOMER, K; GOVOREANU, B et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1789-1795, issn 0167-9317, 7 p.Conference Paper

The application of an ultrathin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low-power applicationsCHANG, S. Z; YU, H. Y; VELOSO, A et al.IEEE electron device letters. 2007, Vol 28, Num 7, pp 634-636, issn 0741-3106, 3 p.Article

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Chemisorption of ALD precursors in and on porous low-k filmsVERDONCK, P; DELABIE, A; SWERTS, J et al.Microelectronic engineering. 2013, Vol 106, pp 81-84, issn 0167-9317, 4 p.Conference Paper

Band offsets at interfaces of (1 00)ln_xGa_1-xAs (0 ≤ x ≤ 0.53) with Al₂O₃ and HfO₂AFANAS'EV, V. V; STESMANS, A; NEWCOMB, S. B et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1550-1553, issn 0167-9317, 4 p.Conference Paper

Influence of passivating interlayer on Ge/HfO₂ and Ge/Al₂O₃ interface band diagramsAFANAS'EV, V. V; STESMANS, A; DELABIE, A et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 230-235, issn 1369-8001, 6 p.Conference Paper

Electrical characteristics of Ge/GeO_x(N)/HfO₂ gate stacksHOUSSA, M; DE JAEGER, B; DELABIE, A et al.Journal of non-crystalline solids. 2005, Vol 351, Num 21-23, pp 1902-1905, issn 0022-3093, 4 p.Conference Paper

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Integration of high-K gate dielectrics: Wet etch, cleaning and surface conditioningDE GENDT, S; BECKX, S; PARASHIV, V et al.Proceedings - Electrochemical Society. 2003, pp 67-77, issn 0161-6374, isbn 1-56677-411-X, 11 p.Conference Paper

Study of the coordination of Cu²⁺ in zeolite Y : Interaction with water and ammoniaDELABIE, A; PIERLOOT, K; GROOTHAERT, M. H et al.Microporous and mesoporous materials. 2000, Vol 37, Num 1-2, pp 209-222, issn 1387-1811Article